Four diodes, four jobs
14 parts
Four diode blocks share one sheet, every source at 100 kHz. A Schottky and a silicon diode carry an identical measured 4.080 mA in a single series loop and the two differential probes read the split — 0.2867 V against 0.6332 V, the 0.347 V saving that is the whole reason Schottkys exist — while a TVS shears a ±12.000 V line to ±7.108 V in both directions and the half-wave block passes 4.364 V of a 5 V peak. The fourth block puts a plain diode and a PIN diode into 100 kΩ each: on the blocked half-cycle their junction capacitance, 2 pF against 4.7 pF, leaks the input straight through, measured at −0.545 V and −1.200 V at the same instant. Every part here is a real Shockley junction model rather than a macromodel — but the PIN diode is only that junction plus its larger capacitance, so the carrier-lifetime variable RF resistance a real PIN diode is bought for is not simulated.
- V1 5V·100kHz
- R1 1kΩ
- SD1
- D1
- V2 12V·100kHz
- R2 1kΩ
- TVS1 6.8V
- V3 5V·100kHz
- HW1
- R3 1kΩ
- D2
- R4 100kΩ
- PIND1
- R5 100kΩ
