MOSFET I–V curves
4 parts
The output-characteristic plot from every MOSFET datasheet, generated live: sweep the drain supply on the X axis and step the gate voltage to get one curve per family value. Below V_DS = V_GS − V_T each curve is the resistive triode region; past that knee it saturates at (Kp/2)(V_GS − V_T)², tilted slightly upward by channel-length modulation. The device is the solver's real level-1 square-law FET (V_T = 2 V, Kp = 0.02, λ = 0.01), not a behavioural block. R1 is a 0.1 Ω sense element — the current probe on its drain-side pin reads drain current, and as placed (gate at 4 V) the FET sits on its top curve at 42.0 mA.
- V1 5V
- R1 100mΩ
- V2 4V
- M1 Vt 2V
